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 Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC1096
DESCRIPTION With TO-202 package Low breakdown voltage High current High fT APPLICATIONS For audio frequency power amplifier and low speed switching applications Suitable for output stages of 3 to 5 watts car radio sets and car stereo
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25ae Collector power dissipation TC=25ae Junction temperature Storage temperature 10 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE 40 30 5 3 6 0.6 1.2 W UNIT V V V A A A
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=3A ;IB=0.3A IC=3A ;IB=0.3A IC=10mA; IB=0 VCB=30V;IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1.0A ; VCE=5V IE=0; VCB=10V;f=1.0MHz IC=0.1A ; VCE=5V 20 40 55 65 30 MIN TYP.
2SC1096
SYMBOL VCEsat VBEsat VCEO ICBO IEBO hFE-1 hFE-2 COB fT
MAX 2.0 2.0
UNIT V V V
1.0 1.0 |I
|I
A A
250 pF MHz
hFE-1 classifications N 40-60 M 50-100 L 80-160 K 120-250
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1096
Fig.2 outline dimensions
JMnic


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